| PART |
Description |
Maker |
| IXGH16N170A |
High Voltage IGBT 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|
| IXGR32N170AH1 |
26 A, 1700 V, N-CHANNEL IGBT
|
IXYS CORP
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CM200DX-34SA |
Dual IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM600DXL-34SA |
Dual IGBT NX-Series Module 600 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| T0781 T0781-6C |
1700 - 2300 MHz High Linearity SiGe Active Receiver Mixer RF/MICROWAVE DOWN CONVERTER
1700-2300 MHz high intinerary SiGe active receive mixer
|
Atmel, Corp.
|
| BUP313D Q67040-A4228-A2 BUP313-D |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
